onsemi · FETs & Power MOSFETs · MPN FDA59N25
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| Gate Charge(Qg) | 82nC@200V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 59A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 392W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 49mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.02nF |
N-Channel 250V 59A 392W Through Hole TO-3PN