onsemi · FETs & Power MOSFETs · MPN FDA50N50
No reviews yet — be the first to review onsemi FDA50N50.
| Gate Charge(Qg) | 137nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 1nF |
| Current - Continuous Drain(Id) | 48A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 625W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.46nF |
| Type | N-Channel |
500V 48A 5V 625W 105mΩ@10V 1 N-channel N-Channel TO-3P-3 Single FETs, MOSFETs RoHS