onsemi · FETs & Power MOSFETs · MPN FDA38N30
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 300V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | - |
| RDS(on) | 70mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.6nF |
N-Channel 300V 38A Through Hole TO-3PN