onsemi · FETs & Power MOSFETs · MPN FDA28N50F
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| Gate Charge(Qg) | 105nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 310W |
| Reverse Transfer Capacitance (Crss@Vds) | 56pF |
| RDS(on) | 140mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.387nF |
N-Channel 500V 28A 310W Through Hole TO-3PN