onsemi · FETs & Power MOSFETs · MPN FDA28N50
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 576pF |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 310W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 122mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.866nF |
| Type | N-Channel |
N-Channel 500V 28A 310W Through Hole TO-3P-3