onsemi FDA24N50F

onsemi · FETs & Power MOSFETs · MPN FDA24N50F

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation270W
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)166mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.31nF

Technical details

N-Channel 500V 24A 270W Through Hole TO-3PN

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