onsemi FDA24N40F

onsemi · FETs & Power MOSFETs · MPN FDA24N40F

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage400V
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation235W
RDS(on)190mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)38pF
Number1 N-channel
Input Capacitance(Ciss)3.03nF

Technical details

N-Channel 400V 23A 235W Through Hole TO-3PN

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