onsemi · FETs & Power MOSFETs · MPN FDA18N50
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| Gate Charge(Qg) | 60nC@400V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 239W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 265mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.86nF |
N-Channel 500V 19A 239W Through Hole TO-3PN