onsemi · FETs & Power MOSFETs · MPN FDA16N50LDTU
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 16.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 205W |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.945nF |
500V 16.5A 5V 205W 1 N-channel TO-3PN-3 Single FETs, MOSFETs RoHS