onsemi FCPF360N65S3R0L

onsemi · FETs & Power MOSFETs · MPN FCPF360N65S3R0L

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Specifications

Gate Charge(Qg)18nC
Drain to Source Voltage650V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation27W
RDS(on)360mΩ@10V
Number1 N-channel
Vgs±30V
TypeN-Channel

Technical details

N-Channel 650V 10A 27W Through Hole TO-220F

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