onsemi · FETs & Power MOSFETs · MPN FCPF190N65FL1-F154
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 78nC@10V |
| Output Capacitance(Coss) | 3.055nF |
| Current - Continuous Drain(Id) | 20.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 680fF |
| RDS(on) | 190mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.055nF |
| Type | N-Channel |
N-Channel 650V 20.6A 50W Through Hole TO-220F