onsemi FCPF190N65FL1-F154

onsemi · FETs & Power MOSFETs · MPN FCPF190N65FL1-F154

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)78nC@10V
Output Capacitance(Coss)3.055nF
Current - Continuous Drain(Id)20.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)680fF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.055nF
TypeN-Channel

Technical details

N-Channel 650V 20.6A 50W Through Hole TO-220F

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