onsemi · FETs & Power MOSFETs · MPN FCPF13N60NT
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| Gate Charge(Qg) | 30.4nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 116W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 220mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.765nF |
N-Channel 600V 13A 116W Through Hole TO-220F