onsemi · FETs & Power MOSFETs · MPN FCP600N65S3R0
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 10pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 54W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 493mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 465pF |
| Vgs | ±30V |
N-Channel 650V 6A Through Hole TO-220