onsemi FCP400N80Z

onsemi · FETs & Power MOSFETs · MPN FCP400N80Z

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Specifications

Gate Charge(Qg)56nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation195W
Reverse Transfer Capacitance (Crss@Vds)0.5pF
RDS(on)340mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.35nF

Technical details

N-Channel 800V 14A 195W Through Hole TO-220

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