onsemi · FETs & Power MOSFETs · MPN FCP360N65S3R0
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 173pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 730pF |
650V 10A 4.5V 83W 360mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS