onsemi · FETs & Power MOSFETs · MPN FCP25N60N-F102
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| Gate Charge(Qg) | 74nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 216W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF |
| RDS(on) | 107mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.352nF |
600V 25A 4V 216W 107mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS