onsemi · FETs & Power MOSFETs · MPN FCP190N60E
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 82nC@10V |
| Current - Continuous Drain(Id) | 20.6A |
| Output Capacitance(Coss) | 2.396nF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | 190mΩ@10V |
| Input Capacitance(Ciss) | 3.175nF |
| Type | N-Channel |
600V 20.6A 3.5V 208W 190mΩ@10V N-Channel TO-220-3 Single FETs, MOSFETs RoHS