onsemi · FETs & Power MOSFETs · MPN FCP190N60
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| Gate Charge(Qg) | 74nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 2.165nF |
| Current - Continuous Drain(Id) | 20.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 208W |
| Reverse Transfer Capacitance (Crss@Vds) | 128pF |
| RDS(on) | 199mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.95nF |
| Type | N-Channel |
600V 20.2A 3.5V 208W 199mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS