onsemi · FETs & Power MOSFETs · MPN FCP16N60N
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| Gate Charge(Qg) | 52.3nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 134.4W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.17nF |
600V 16A 4V 134.4W 170mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS