onsemi · FETs & Power MOSFETs · MPN FCP165N65S3
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| Gate Charge(Qg) | 39nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 154W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 165mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.5nF |
650V 19A 4.5V 154W 165mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS