onsemi FCP150N65F

onsemi · FETs & Power MOSFETs · MPN FCP150N65F

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)72nC@10V
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation298W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)133mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.737nF

Technical details

650V 24A 3V 298W 133mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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