onsemi FCP13N60N

onsemi · FETs & Power MOSFETs · MPN FCP13N60N

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage600V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation116W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)1.765nF

Technical details

600V 13A 116W 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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