onsemi · FETs & Power MOSFETs · MPN FCP110N65F
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| Gate Charge(Qg) | 98nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 357W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.65pF |
| RDS(on) | 96mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.68nF |
650V 35A 357W 96mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS