onsemi · FETs & Power MOSFETs · MPN FCP099N65S3
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| Gate Charge(Qg) | 61nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 79mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.48nF |
| Vgs | ±30V |
| Type | N-Channel |
N-Channel 650V 30A 227W Through Hole TO-220