onsemi · FETs & Power MOSFETs · MPN FCMT299N60
No reviews yet — be the first to review onsemi FCMT299N60.
| Gate Charge(Qg) | 39nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.87pF |
| RDS(on) | 299mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.948nF |
600V 12A 3.5V 125W 299mΩ@10V 1 N-channel Power-88 Single FETs, MOSFETs RoHS