onsemi · FETs & Power MOSFETs · MPN FCMT080N65S3
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| Gate Charge(Qg) | 71nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 38A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 260W |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.765nF |
N-Channel 650V 38A 260W Surface Mount TDFN-4(8x8)