onsemi · FETs & Power MOSFETs · MPN FCHD040N65S3-F155
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| Gate Charge(Qg) | 136nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 417W |
| Reverse Transfer Capacitance (Crss@Vds) | 59pF |
| RDS(on) | 40mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.74nF |
650V 65A 4.5V 417W 40mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS