onsemi FCH47N60N

onsemi · FETs & Power MOSFETs · MPN FCH47N60N

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Specifications

Gate Charge(Qg)151nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation368W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)62mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.7nF
TypeN-Channel

Technical details

600V 47A 4V 368W 62mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS

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