onsemi FCH47N60-F133

onsemi · FETs & Power MOSFETs · MPN FCH47N60-F133

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Specifications

Gate Charge(Qg)210nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)47A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation417W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)70mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8nF

Technical details

N-Channel 600V 47A 417W Through Hole TO-247

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