onsemi · FETs & Power MOSFETs · MPN FCH150N65F-F155
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 72nC@10V |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 298W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.77pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.737nF |
650V 24A 298W Through Hole TO-247-3