onsemi · FETs & Power MOSFETs · MPN FCH125N60E
No reviews yet — be the first to review onsemi FCH125N60E.
| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 95nC@10V |
| Current - Continuous Drain(Id) | 29A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 278W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 125mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.99nF |
600V 29A 3.5V 278W 125mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS