onsemi · FETs & Power MOSFETs · MPN FCH104N60F-F085
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| Gate Charge(Qg) | 109nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 37A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 357W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.7pF |
| RDS(on) | 91mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.302nF |
600V 37A 3V 357W 91mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS