onsemi FCH104N60F

onsemi · FETs & Power MOSFETs · MPN FCH104N60F

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Specifications

Gate Charge(Qg)139nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)37A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation357W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)104mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.95nF
TypeN-Channel

Technical details

N-Channel 600V 37A 357W Through Hole TO-247

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