onsemi · FETs & Power MOSFETs · MPN FCH104N60
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 37A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 357W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.66pF |
| RDS(on) | 96mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.13nF |
600V 37A 3.5V 357W 96mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS