onsemi · FETs & Power MOSFETs · MPN FCH077N65F-F085
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| Gate Charge(Qg) | 126nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 54A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 481W |
| Reverse Transfer Capacitance (Crss@Vds) | 194pF |
| RDS(on) | 77mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.162nF |
650V 54A 5V 481W 77mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS