onsemi · FETs & Power MOSFETs · MPN FCH060N80-F155
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 350nC@10V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 500W |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 14.685nF |
800V 4.5V 500W 60mΩ@10V 1 N-channel TO-247-3 Single FETs, MOSFETs RoHS