onsemi · FETs & Power MOSFETs · MPN FCH041N65F-F085
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| Gate Charge(Qg) | 234nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 76A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 595W |
| Reverse Transfer Capacitance (Crss@Vds) | 227pF |
| RDS(on) | 34mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 13.566nF |
| Vgs | ±20V |
| Type | N-Channel |
N-Channel 650V 76A Through Hole TO-247-3