onsemi · FETs & Power MOSFETs · MPN FCH041N65EF-F155
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| Gate Charge(Qg) | 298nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 490pF |
| Current - Continuous Drain(Id) | 76A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 595W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 41mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 12.56nF |
| Type | N-Channel |
650V 76A 5V 595W 41mΩ@10V 1 N-channel N-Channel TO-247AC-3 Single FETs, MOSFETs RoHS