onsemi · FETs & Power MOSFETs · MPN FCH023N65S3L4
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| Gate Charge(Qg) | 222nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 175W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 23mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.16nF |
N-Channel 650V 75A 175W Through Hole TO-247-4