onsemi · FETs & Power MOSFETs · MPN FCH023N65S3
No reviews yet — be the first to review onsemi FCH023N65S3.
| Gate Charge(Qg) | 222nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 195pF |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 595W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 23mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.16nF |
| Type | N-Channel |
650V 75A 4.5V 595W 23mΩ@10V 1 N-channel N-Channel TO-247AC-3 Single FETs, MOSFETs RoHS