onsemi · FETs & Power MOSFETs · MPN FCD9N60NTM
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| Gate Charge(Qg) | 17.8nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 92.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.5pF |
| RDS(on) | 385mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
N-Channel 600V 92.6W Surface Mount TO-252AA