onsemi · FETs & Power MOSFETs · MPN FCD7N60TM-WS
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 920pF |
600V 7A 5V 83W 1 N-channel TO-252 Single FETs, MOSFETs RoHS