onsemi · FETs & Power MOSFETs · MPN FCD600N60Z
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 840pF |
| Current - Continuous Drain(Id) | 7.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 89W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 600mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.12nF |
| Type | N-Channel |
600V 7.4A 3.5V 89W 600mΩ@10V 1 N-channel N-Channel TO-252AA Single FETs, MOSFETs RoHS