onsemi · FETs & Power MOSFETs · MPN FCD5N60TM
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 4.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 54W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 810mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
N-Channel 650V 4.6A 54W Surface Mount TO-252AA