onsemi · FETs & Power MOSFETs · MPN FCD4N60TM
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| Gate Charge(Qg) | 12.8nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 19.5pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 540pF |
600V 3.9A 3V 50W 1 N-channel TO-252AA Single FETs, MOSFETs RoHS