onsemi · FETs & Power MOSFETs · MPN FCD3400N80Z
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| Gate Charge(Qg) | 9.6nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 32W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.36pF |
| RDS(on) | 2.75Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 400pF |
800V 2.5V 32W 2.75Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS