onsemi · FETs & Power MOSFETs · MPN FCD2250N80Z
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| Drain to Source Voltage | 800V |
|---|---|
| Gate Charge(Qg) | 14nC@10V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 39W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.75pF |
| RDS(on) | 2.25Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 585pF |
N-Channel 800V 2.6A 39W Surface Mount TO-252(DPAK)