onsemi FCD1300N80Z

onsemi · FETs & Power MOSFETs · MPN FCD1300N80Z

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Specifications

Gate Charge(Qg)16.2nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)22.3pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)0.74pF
RDS(on)1.3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)661pF
Vgs±20V

Technical details

N-Channel 800V 4A Surface Mount TO-252(DPAK)

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