onsemi · Transistors (BJTs) · MPN EMF23XV6T5G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 140MHz |
| Emitter-Base Voltage VEBO | 6V |
| Vce Saturation(VCE(sat)) | 500mV |
| type | NPN+PNP |
| Number | 1 NPN + 1 PNP |
| Pd - Power Dissipation | 500mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
1 NPN + 1 PNP 500mW 100mA 50V Bipolar Transistor Arrays, Pre-Biased RoHS