onsemi · FETs & Power MOSFETs · MPN EFC6601R-TR
No reviews yet — be the first to review onsemi EFC6601R-TR.
| Current - Continuous Drain(Id) | 13A |
|---|---|
| RDS(on) | 11.5mΩ@4.5V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| Drain to Source Voltage | 24V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 48nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
13A 11.5mΩ@4.5V 2W 500mV 2 N-Channel WLCSP-4 FET, MOSFET Arrays RoHS